ABSTRACT
AlGaN germicidal ultraviolet (GUV) light emitting diodes (LEDs) are one of the most promising disinfection technologies in fighting the COVID-19 pandemic;however, GUV LEDs are still lacking in efficiency due to low p-type doping efficiency in p-AlGaN. The most successful approach for producing conductive p-type AlGaN is the implementation of a polarization-enhanced short period AlxGa1-xN/ AlyGa1-yN superlattice (SL) structure, which enhances hole injection and reduces device operating voltage. In this report, we investigated different aspects of the superlattice including the AlxGa1-xN and AlyGa1-yN alloy constituent compositions, x and y, period thickness, total thickness, and Mg dopant concentration in terms of LED performance as well as electrical, optical, and morphological characteristics. The polarization-enhanced p-type doping in the AlGaN superlattice was also investigated computationally, giving excellent agreement with experimental results. Highly efficient UVC LEDs (279 nm) with EQE of 2% at 5 A/cm2 were demonstrated. A maximum output power of 5.5 mW (56 mW/mm2) was achieved at 100 mA. IEEE
ABSTRACT
Despite the COVID-19 outbreak, the power Silicon Carbide (SiC) and GaN market continue their ascension. The high growth of the EV/HEV market impacted significantly the wide SiC industry, numerous carmakers continue qualifying SiC devices in main inverters, onboard chargers (OBC) and DC/DC converters. While GaN has found its killer application in consumer fast charging. This paper provides an overview of SiC and GaN device technology, including Yole Développement’s understanding of the market’s current dynamics and future evolution of wide band gap materials compared to mainstream Silicon power electronics market. © 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.